| 硅基表面无形貌改变的硫酸／过氧化氢氧化清洗 |
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| 引用本文： | 毛强强,文路,刘宏芳,刘善堂.硅基表面无形貌改变的硫酸／过氧化氢氧化清洗[J].武汉化工学院学报,2009,31(5):1-3. |
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| 作者姓名： | 毛强强 文路 刘宏芳 刘善堂 |
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| 作者单位： | [1]武汉工程大学化工与制药学院,绿色化工过程省部共建教育部重点实验室,湖北省新型反应器与绿色化学工艺重点实验室,湖北武汉430074 [2]华中科技大学化学与化工学院,材料化学与服务失效湖北省重点实验室,湖北武汉430074 |
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| 基金项目： | 国家自然科学基金（200873097）和绿色化工过程省部共建教育部重点实验室开放基金（GCP200813） |
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| 摘 要： | 提出了一种利用硫酸／过氧化氢溶液氧化清洗硅基的方法．硅片经超声预清洗后，放入硫酸／过氧化氢溶液中，80℃下氧化清洗其表面的污染物．通过接触角检测，表征了清洗前后硅基表面的亲水性变化．通过原子力显微镜（AFM）表征了经硫酸／过氧化氢溶液清洗后硅基的表面形貌．结果显示，经硫酸／过氧化氢溶液亲水化清洗30min后的硅基表面的接触角为7．3°，显示出很强的亲水性，其表面均方根粗糙度（RMS）仅为0．03nm．因此，硫酸／过氧化氢氧化清洗法是一种硅基表面无形貌改变的亲水化清洗方法．
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| 关 键 词： | 硅基 化学清洗 表面形貌 |
Silicon wafer cleaning method without surface morphology change by sulfuric acid/hydrogen peroxide oxidation |
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| Affiliation: | MAO Qiang-qiang ,WEN Lu , LIU Hong-f ang ,LIU Shan-tang (1. Hubei Key Laboratory of Novel Reator and Green Chemical Technology ,Key Laboratory for Green Chemical Procens of Ministry of Education,School of Chemical Engineering and Pharmacy,Wuhan Institute of Technology ,Wuhan 430074 ,China;2. Hubei Key Laboratory of Materials Chemistry and Service Failure,School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology,Wuhan 430074,China) |
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| Abstract: | This paper provides a convenient method for the silicon wafer cleaning by using the sulfuric acid/hydrogen peroxide oxidation. The wafer was pretreated by ultrasonic in acetone solution for 3 minutes,followed by immersing the wafer in sulfuric acid /hydrogen peroxide solution at 80 ℃ for several minutes to oxide the contaminants on the silicon wafer surface. The wafer surface was hydrophilic after 30 min oxidation and the contact angle was around 7. 3 °. The contaminants can be washed away by ultrapure water. The AFM image of the wafer surface shows the root-mean square surface roughness （RMS） is 0.03 nm. Therefore, sulfuric acid/hydrogen peroxide oxidation procedures could be an easy method for the silicon wafer cleaning without morphology change. |
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| Keywords: | silicon wafer cleaning chemical cleaning surface morphology |
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