Optical and electrical properties of SnO2 films prepared by chemical vapour deposition

Transparent and conducting SnO₂ films are prepared at 500°C on quartz substrates by chemical vapour deposition technique, involving oxidation of SnCl₂. The effect of oxygen gas flow rate on the properties of SnO₂ films is reported. Oxygen with a flow rate from 0·8–1·35 lmin⁻¹ was used as both carrier and oxidizing gas. Electrical and optical properties are studied for 150 nm thick films. The films obtained have a resistivity between 1·72 × 10⁻³ and 4·95 × 10⁻³ ohm cm and the average transmission in the visible region ranges 86–90%. The performance of these films was checked and the maximum figure of merit value of 2·03 × 10⁻³ ohm⁻¹ was obtained with the films deposited at the flow rate of 1·16 lmin⁻¹.