| Effects of Annealing on Luminescence of ZnO Films Deposited on Si Substrates by RF Magnetron Sputtering |
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| 作者姓名： | 宁兆元 李伙全 |
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| 作者单位： | ProvincialkeylaboratoryofThinFilmMaterials,DepartmentofPhysics,SuzhouUniversity,Suzhou215006,China |
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| 摘 要： | Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of O2/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films.
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| 关 键 词： | 氧化锌 薄膜沉降 磁电管溅射法 发光退火 等离子体 |
Effects of Annealing on Luminescence of ZnO Films Deposited on Si Substrates by RF Magnetron Sputtering |
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| Ning Zhaoyuan,Li HuoquanProvincial key laboratory of Thin Film Materials.Effects of Annealing on Luminescence of ZnO Films Deposited on Si Substrates by RF Magnetron Sputtering[J].Plasma Science & Technology,2005,7(1):2665-2668. |
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| Authors: | Ning Zhaoyuan Li HuoquanProvincial key laboratory of Thin Film Materials |
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| Affiliation: | Ning Zhaoyuan,Li HuoquanProvincial key laboratory of Thin Film Materials,Department of Physics,Suzhou University,Suzhou 215006,China |
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| Abstract: | Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of 02/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films. |
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| Keywords: | ZnO photoluminescence annealing |
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