A three-layer 3D silicon system using through-Si vertical opticalinterconnections and Si CMOS hybrid building blocks |
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Authors: | Bond SW Vendier O Lee M Jung S Vrazel M Lopez-Lagunas A Chai S Dagnall G Brooke M Jokerst NM Wills DS Brown A |
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Affiliation: | Lawrence Livermore Nat. Lab., CA; |
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Abstract: | We present for the first time a three-dimensional (3D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3D through-Si vertical optical interconnections and a fabricated three layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10-9 |
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