Sputtering power and deposition pressure effects on the electrical and structural properties of copper thin films |
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Authors: | Email author" target="_blank">Kah-Yoong?ChanEmail author Bee-San?Teo |
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Affiliation: | (1) Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor, Malaysia |
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Abstract: | We investigated the effects of sputtering power and deposition pressure on the electrical and structural properties of dc
magnetron sputter-deposited copper films on p-type silicon grown at room temperature. Results from our experiments showed that the deposition rate of the copper films
increased proportionally with the sputtering power. Sputtering power also affected the structural properties of the copper
films through the surface diffusion mechanism of the adatom. From the scanning electron microscopy surface analysis, the high
sputtering power favored the formation of continuous film. The poor microstructure with voided boundaries as a result of low
sputtering power deposition was manifested with the high resistivity obtained. The deposition rate was found also depending
on the deposition pressure. The deposition pressure had the contrary effect on structural properties of copper films in which
high deposition pressure favored the formation of voided boundaries film structure due to the shadowing effect, which varied
with different deposition pressure. |
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Keywords: | |
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