等离子体技术对钽粉杂质含量降低作用机制

为摸清连续式、感应等离子体粉体制备技术对电容器级钽粉杂质含量水平的降低作用机制,进行不同原料粉体针对同一等离子工艺和不同等离子工艺参数针对同一粉体的制备试验,并对比分析不同原料处理前后钽粉的杂质含量和不同等离子工艺处理后钽粉的杂质含量。结果表明,感应等离子体技术制备对降低电容器级钽粉的杂质含量具有显著作用,与国家有色金属工业标准YS/T573—2007中比电容最高的牌号为FTa-120K钽粉的杂质含量对比分析发现,氧质量分数降低20%以上,碳、钾、钠元素的质量分数降低90%以上;等离子体与原料粉体的耦合作用越强,对粉体杂质含量的降低效果越明显。

Mechanism of decreasing impurity content of Ta powder by induction plasma technology

The capacitor grade Ta powder preparation experiments were done using induction plasma technology. For the same type of raw powder, the processing parameters were changed, or for the same processing parameters, the type of raw powder was changed. The impurity content of powder before and after plasma treatment were measured and compared. The result shows that with increasing of energy coupling intensity, effect of decreasing the impurity content of capacitor grade Ta powder is improved. As compared with FTa...