| PDSOI nMOSFETs关态击穿特性 |
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| 引用本文： | 毕津顺,海潮和.PDSOI nMOSFETs关态击穿特性[J].半导体学报,2007,28(1):14-18. |
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| 作者姓名： | 毕津顺 海潮和 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件.对这些器件的关态击穿特性进行了研究.当背栅沟道注入剂量从1.0×1013增加到1.3×1013cm-2,浮体n型沟道器件关态击穿电压由5.2升高到6.7V,而H型栅体接触n型沟道器件关态击穿电压从11.9降低到9V.通过测量寄生双极晶体管静态增益和漏体pn结击穿电压,对部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件的击穿特性进行了定性解释和分析.
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| 关 键 词： | 部分耗尽绝缘体上硅 击穿 背栅沟道注入 |
| 文章编号： | 0253-4177(2007)01-0014-05 |
| 修稿时间： | 9/3/2006 5:00:58 PM |
Off-State Breakdown Characteristics of PDSOI nMOSFETs |
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| Bi Jinshun and Hai Chaohe.Off-State Breakdown Characteristics of PDSOI nMOSFETs[J].Chinese Journal of Semiconductors,2007,28(1):14-18. |
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| Authors: | Bi Jinshun and Hai Chaohe |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China |
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| Abstract: | Partially-depleted silicon-on-insulator(PDSOI)floating-body(FB)nMOSFETs and H-gate type body-contacted(BC)nMOSFETs are fabricated with different back channel implantation dosages.The off-state breakdown characteristics of these devices are presented.The off-state breakdown voltages of the FB nMOSFETs increase from 5.2 to 6.7V,and those of the H-gate type BC nMOSFETs decrease from 11.9 to 9V as the back channel implantation dosages increase from 1.0e13 to 1.3e13cm-2.By measuring the parasitic bipolar transistor static gain and the breakdown characteristics of the pn junction between the drain and the body,the differences between the breakdown mechanisms of the FB and H-gate type BC nMOSFETs are analyzed and explained qualitatively. |
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| Keywords: | PDSOI breakdown back channel implantation |
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