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| Ge-SiO2薄膜的结构及其发光特性的研究 | |
| 引用本文： | 叶春暖,汤乃云,吴雪梅,诸葛兰剑,俞跃辉,姚伟国. Ge-SiO2薄膜的结构及其发光特性的研究[J]. 功能材料与器件学报, 2002, 8(2): 103-107 |
| 作者姓名： | 叶春暖 汤乃云 吴雪梅 诸葛兰剑 俞跃辉 姚伟国 |
| 作者单位： | 1. 苏州大学物理系,苏州215006 2. 苏州大学分析测试中心,苏州215006 3. 中国科学院上海微系统与信息技术研究所,上海200050 |
| 基金项目： | 国家自然科学基金(No.69876043);中国科学院上海冶金研究所离子束开放实验室资助 |
| 摘 要： | 采用射频磁控溅射技术制备了Ge-SiO2薄膜，在N2气氛下进行了不同温度的退火处理，分析了样品在室温下的光致发光（PL）特性，为探讨其发光机制，对薄膜的结构进行了表征，XRD、XPS、FTIR谱分析说明样品的发光特性与其结构相对应，394nmPL由GeO缺陷引起，580nmPL与Ge纳米晶粒和基质SiO2界面处的发光光中心相联系。 |
| 关 键 词： | Ge－SiO2薄膜 磁控溅射 光致发光 结构 |
| 文章编号： | 1007-4252(2002)02-0103-05 |
| 修稿时间： | 2001-04-16 |
Study on structure and photoluminescence of SiO2 films containing nc- Ge |
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| YE Chun -nuan ,TANG Nai -yun ,WU Xue -mei ,ZHUGE Lan -jian ,YU Yue -hui ,YAO Wei -guo. Study on structure and photoluminescence of SiO2 films containing nc- Ge[J]. Journal of Functional Materials and Devices, 2002, 8(2): 103-107 | |
| Authors: | YE Chun -nuan TANG Nai -yun WU Xue -mei ZHUGE Lan -jian YU Yue -hui YAO Wei -guo |
| Affiliation: | YE Chun -nuan 1,TANG Nai -yun 1,WU Xue -mei 1,ZHUGE Lan -jian 2,YU Yue -hui 3,YAO Wei -guo 1 |
| Abstract: | By r.f.magnetron sputtering technique,SiO 2 films containing nc -Ge were deposited on p -type Si substrates using a Ge -SiO 2 composite target with Ge wafer on the SiO 2 target.And then,they were annealed in a N 2 ambience at different temperature f or 30min.The microstructure was tested by XRD,XPS,FTIR.The PL properties at room temperature were shown in details.From ob -servation,it is suggested that the o rigin of the violet light emission is related to the defects of GeO,and that of the yellow one is correlated to the luminescent centers between nc -Ge and matrix SiO 2 . |
| Keywords: | Ge -SiO 2 films magnetron -sputtering photoluminescence |
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