| 微波肖特基势垒二极管硅化物工艺技术研究 |
| |
| 引用本文： | 李恒,钟星学,何放. 微波肖特基势垒二极管硅化物工艺技术研究[J]. 半导体技术, 1999, 24(6): 24-28 |
| |
| 作者姓名： | 李恒 钟星学 何放 |
| |
| 作者单位： | 亚光电子有限责任公司研究所,成都,610051 |
| |
| 摘 要： | 对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。用Ｎｉ－Ｓｉ硅化物作中势垒硅化物，用Ｔｉ－Ｓｉ硅化物作低势垒硅化物。通过设计和工艺实验，得到温度、时间、真空度等取佳工艺技术条件。在保持微波肖特基二极管势垒特征的同时，提高了反向电压，增强了它的稳定性和可靠性。
|
| 关 键 词： | 硅化物 肖特基势垒 微波 |
| 修稿时间： | 19990118 |
Technique Research of Microwave Schottky Silicide Barrier Diodes |
| |
| Li Heng,Zhong Xingxue,He Fang. Technique Research of Microwave Schottky Silicide Barrier Diodes[J]. Semiconductor Technology, 1999, 24(6): 24-28 |
| |
| Authors: | Li Heng Zhong Xingxue He Fang |
| |
| Affiliation: | Li Heng,Zhong Xingxue,He Fang(Research Institute of Yaguang Electronic Limited Liability Company,Chengdu 610051) |
| |
| Abstract: | This paper describes techniques research of microwave schottky silicide barrier diodes.The silicide of Ni Si system is used for medium barrier diodes and the silicide of Ti Si system is used for low barrier diodes.By calculating,experimenting and analysing,all constructive parameters and the best technical conditions such as temperature,time,vacuity were obtained.Based on the research,the reverse voltage of the schottky barrier has been raised and the characteristics of the schottky barrier is not changed.In addition,reliability and steadiness are well. |
| |
| Keywords: | Silicide Schottky barrier Microwave |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
