Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide |
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Authors: | Eiji MiyazakiYuji Goda Shigeru Kishimoto Takashi Mizutani |
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Affiliation: | a Department of Quantum Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan b VBL, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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Abstract: | AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide which was deposited by atomic layer deposition (ALD) were fabricated and their performance was then compared with that of AlGaN/GaN MOSHFETs with HfO2 gate oxide. The capacitance (C)-voltage (V) curve of the Al2O3/GaN MOS diodes showed a lower hysteresis and lower interface state density than the C-V curve of the HfO2/GaN diodes, indicating better quality of the Al2O3/GaN interface. The saturation of drain current in the ID-VGS relation of the Al2O3 AlGaN/GaN MOSHFETs was not as pronounced as that of the HfO2 AlGaN/GaN MOSHFETs. The gate leakage current of the Al2O3 MOSHFET was five to eight orders of magnitude smaller than that of the HfO2 MOSHFETs. |
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Keywords: | GaN MOSHFET Al2O3 HfO2 Interface state |
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