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Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy |
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| Authors: | Yi-Keng Fu Yu-Hsuan Lu Ren-Hao Jiang Bo-Chun ChenYen-Hsiang Fang Rong Xuan Yan-Kuin SuChia-Feng Lin Jebb-Fang Chen |
| Affiliation: | a Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan b Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan c The Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan d Electrophysics Department, National Chiao Tung University, Hsinchu, Taiwan |
| Abstract: | Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al0.089In0.035Ga0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer. |
| Keywords: | Quaternary AlInGaN Light-emitting diodes Polarization Metalorganic vapor phase epitaxy |
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