A new low-voltage and high-speed sense amplifier for flash memory |
| |
| Authors: | Guo Jiarong Ran Feng |
| |
| Affiliation: | Microelectronic R&D Center, Shanghai University, Shanghai 200444, China |
| |
| Abstract: | A new low-voltage and high-speed sense amplifier is presented,based on a very simple direct currentmode comparison.It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage,low power and high precision.The proposed amplifier can sense a 0.5 μA current gap and work with a lowest voltage of 1 V.In addition,the current power of a single amplifier is optimized by 15％. |
| |
| Keywords: | flash memory sense amplifier current-mode low-voltage |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
