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A novel 2-T structure memory device using a Si nanodot for embedded application |
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| Authors: | Yang Xiaonan Wang Yong Zhang Manhong Huo Zongliang Liu Jing Zhang Bo Liu Ming |
| Affiliation: | 1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beij ing 100029, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China 2. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beij ing 100029, China;Grace Semiconductor Manufacturing Corporation, Shanghai 201203, C 3. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beij ing 100029, China 4. Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China |
| Abstract: | Performance and reliability of a 2 transistor Si nanocrystal nonvolatile memory(NVM) are investigated. A good performance of the memory cell has been achieved,including a fast program/erase(P/E) speed under low voltages,an excellent data retention(maintaining for 10 years) and good endurance with a less threshold voltage shift of less than 10%after 10~4 P/E cycles.The data show that the device has strong potential for future embedded NVM applications. |
| Keywords: | nonvolatile memory nanocrystal reliability |
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