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Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer |
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| Authors: | Zheng Hong Cheng Xiaoman Tian Haijun Zhao Geng |
| Affiliation: | 1. Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education,Tianjin University of Technology, Tianj in 300384, China 2. Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education,Tianjin University of Technology, Tianj in 300384, China;School of Science, Tianjin University of Technology, Tianjin 300384, China 3. School of Science, Tianjin University of Technology, Tianjin 300384, China |
| Abstract: | We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material.The electrical characteristics of OFETs are improved with the insertion of Aiq3 film.The peak field effect mobility is increased to 1.28 × 10-2 cm2/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm.The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films. |
| Keywords: | organic field effect transistors buffer layer C60 Alq3 channel resistance |
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