|
|||||
|
|
Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator |
|
| Authors: | AResfa Bourzig Y Smahi Brahimi R Menezla |
| Affiliation: | Laboratory of Modeling and Conception of Electronic Circuits, Department of Electronics, University Djillali Liabès, BP89,Sidi Bel Abbes 22000, Algeria |
| Abstract: | The current through a metal-semiconductor junction is mainly due to the majority carriers.Three distinctly different mechanisms exist in a Schottky diode:diffusion of the semiconductor carriers in metal,thermionic emission-diffusion(TED) of carriers through a Schottky gate,and a mechanical quantum that pierces a tunnel through the gate.The system was solved by using a coupled Poisson-Boltzmann algorithm.Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier maj... |
| Keywords: | electrostatic potential and density of carriers current thermionic emission-diffusion and tunnel current through the gate current-voltage characteristics of Schottky diodes temperature |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |