In situ nanoscale refinement by highly controllable etching of the(111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire |
| |
Authors: | Gong Yibin Dai Pengfei Gao Anran Li Tie Zhou Ping Wang Yuelin |
| |
Affiliation: | Science and Technology on Micro-System Laboratory, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
| |
Abstract: | Nanoscale refinement on a(100)oriented silicon-on-insulator(SOI)wafer was introduced by using tetra-methyl-ammonium hydroxide(TMAH,25 wt%)anisotropic silicon etchant,with temperature kept at 50 ℃ to achieve precise etching of the(111)crystal plane.Specifically for a silicon nanowire(SiNW)with oxide sidewall protection,the in situ TMAH process enabled effective size reduction in both lateral(2.3 nm/min)and vertical (1.7 nm/min)dimensions.A sub-50 nm SiNW with a length of microns with uniform triangular cross-section was achieved accordingly,yielding enhanced field effect transistor(FET)characteristics in comparison with its 100 nmwide pre-refining counterpart,which demonstrated the feasibility of this highly controllable refimement process.Detailed examination revealed that the high surface quality of the(111)plane,as well as the bulk depletion property should be the causes of this electrical enhancement,which implies the great potential of the as-made cost-effective SiNW FET device in many fields. |
| |
Keywords: | TMAH etching nanofabrication silicon nanowire field effect transistor |
本文献已被 CNKI 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|