Ultra-low specific on-resistance SOI double-gate trench-type MOSFET |
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| Authors: | Lei Tianfei Luo Xiaorong Ge Rui Chen Xi Wang Yuangang Yao Guoliang Jiang Yongheng Zhang Bo Li Zhaoji |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China ;No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, China |
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| Abstract: | An ultra-low specific on-resistance(R_(on,sp)) silicon-on-insulator(SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed.The MOSFET features double gates and an oxide trench:the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide.Firstly,the double gates reduce R_(on,sp) by forming dual conduction channels.Secondly,the oxide trench not only folds the drift region,but also modulates the electric field,thereby red... |
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| Keywords: | double gates trench specific on-resistance breakdown voltage |
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