| 纳米MOSFET的多栅结构和应变硅纳米线结构 |
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| 引用本文： | 季小明,韩伟华,张严波,陈燕坤,杨富华.纳米MOSFET的多栅结构和应变硅纳米线结构[J].微纳电子技术,2011,48(11):689-696. |
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| 作者姓名： | 季小明 韩伟华 张严波 陈燕坤 杨富华 |
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| 作者单位： | 中国科学院半导体研究所半导体集成技术工程研究中心,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)资助项目(2010CB934104) |
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| 摘 要： | 介绍了在进入22 nm技术节点后MOSFET器件的两个发展方向,即多栅结构和应变硅纳米线结构.首先通过分析特征长度与有效栅极数量的关系,表明多栅结构器件可以有效增强栅极对沟道的控制,抑制短沟道效应,接近理想的亚阈值斜率；然后分析了应变对能带结构的影响,从理论上论述了应变沟道可以显著提高载流子迁移率；最后介绍了悬浮硅纳米...
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| 关 键 词： | 场效应晶体管 多栅结构 应变 硅纳米线 围栅 |
Multi-Gate Structure and Strain Silicon Nanowires Structure of Nanoscale MOSFETs |
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| Li Xiaoming,Han Weihua,Zhang Yanbo,Chen Yankun,Yang Fuhua.Multi-Gate Structure and Strain Silicon Nanowires Structure of Nanoscale MOSFETs[J].Micronanoelectronic Technology,2011,48(11):689-696. |
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| Authors: | Li Xiaoming Han Weihua Zhang Yanbo Chen Yankun Yang Fuhua |
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| Affiliation: | Li Xiaoming,Han Weihua,Zhang Yanbo,Chen Yankun,Yang Fuhua (Research Center of Semiconductor Integration Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | Two development directions of the MOSFET device,i.e.the multi-gate structure and strain silicon nanowires structure after the 22 nm node was introduced.Firstly,the relationship analysis of the characteristic length and the effective gate number shows that the multiple-gate structure is an effective way to enhance the controllability of the gate on channels and suppress the short-channel effects,and the subthreshold slope of the multi-gate MOSFET approximates to the ideal value.Then,the effect of the strain ... |
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| Keywords: | FET multi-gate structure strain silicon nanowire gate-all-around |
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