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厚铝芯片制造工艺的光刻对准效果改善
引用本文:马万里. 厚铝芯片制造工艺的光刻对准效果改善[J]. 微纳电子技术, 2011, 0(10): 679-682
作者姓名:马万里
作者单位:深圳方正微电子有限公司;
摘    要:对于厚铝芯片的制造工艺,由于光刻对准标记上覆盖了厚的铝层,对准标记形貌轮廓会变得模糊,这会导致光刻对准出现困难,对偏的问题将变得常见。为了解决此问题,提出了多种改善方法,首先采用叠加标记法,通过将不同层次的对准标记进行叠加,增大了标记的台阶,对准标记的轮廓变得比原来清晰。其次是局部溅射法,通过夹具保护对准标记,确保标记不被厚铝覆盖,因此厚铝将不会对对准标记产生任何影响。最后是剥离工艺法,通过光刻胶保护对准标记,使之不被厚铝覆盖,因此,对准标记形貌将会保持清晰。这些方法在工艺和原理上是不同的,它们适用于不同的环境。通过这些方法,基本可以解决厚铝工艺中光刻对准困难的问题。

关 键 词:厚铝  光刻  对准  功率器件  专用器件

Improvement in Lithography Alignment with Thick Aluminum Manufacture Process
Ma Wanli. Improvement in Lithography Alignment with Thick Aluminum Manufacture Process[J]. Micronanoelectronic Technology, 2011, 0(10): 679-682
Authors:Ma Wanli
Affiliation:Ma Wanli (Founder Microelectronics International Co.,Ltd.,Shenzhen 518116,China)
Abstract:For manufacture process with thick aluminum,the profile of alignment mark will become blur because of being covered by thick aluminum.It will lead to have difficulty in photo alignment,and misalignment will be common.For the sake of resolving this problem,several methods are put forward.Firstly,with the alignment mark for overlapping,the step of alignment mark is enlarged by overlapping the marks of different layers.The profile of alignment mark become clear than ever.Secondly,through metal sputtering local...
Keywords:thick aluminum  lithography  alignment  power device  application specific device  
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