Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength |
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| Authors: | Duan Chunyan Liu Chao Ai Bin Lai Jianjun Deng Youjun Shen Hui |
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| Affiliation: | State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-sen University,Guangzhou 510275, China |
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| Abstract: | Selected area laser-crystallized polycrystalline silicon(p-Si) thin films were prepared by the third harmonics (355 nm wavelength) generated by a solid-state pulsed Nd:YAG laser.Surface morphologies of 400 nm thick films after laser irradiation were analyzed.Raman spectra show that film crystallinity is improved with increase of laser energy.The optimum laser energy density is sensitive to the film thickness.The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ... |
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| Keywords: | polycrystalline silicon thin films Nd:YAG laser laser crystallization |
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