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A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs |
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| Authors: | Sanjoy Deb Saptarsi Ghosh N Basanta Singh A K De Subir Kumar Sarkar |
| Affiliation: | 1. Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India 2. Department of Electronics & Communication Engineering, Manipur Institute of Technology, Imphal-795004, India 3. Department of Electronics & Communication Engineering, National Institute of Technology, Durgapur-713209, India |
| Abstract: | A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs.Different short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model.Through analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for diff... |
| Keywords: | silicon-on-insulator silicon-on-nothing Poisson's equation short channel effects threshold voltage roll-off subthreshold slope |
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