Novel SEU hardened PD SOI SRAM cell |
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Authors: | Xie Chengmin Wang Zhongfang Wang Xihu Wu Longsheng Liu Youbao |
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Affiliation: | Computer Research & Design Department, Xi'an Microelectronic Technique Institutes, Xi'an 710054, China |
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Abstract: | A novel SEU hardened 10T PD SOI SRAM cell is proposed.By dividing each pull-up and pull-down transistor in the cross-coupled inverters into two cascaded transistors,this cell suppresses the parasitic BJT and source-drain penetration charge collection effect in PD SOI transistor which causes the SEU in PD SOI SRAM. Mixed-mode simulation shows that this novel cell completely solves the SEU,where the ion affects the single transistor.Through analysis of the upset mechanism of this novel cell,SEU performance is... |
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Keywords: | SEU PD SOI SRAM parasitic BJT mixed-mode simulation |
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