Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD |
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| Authors: | Wu Chunbo Zhou Yuqin Li Guorong Liu Fengzhen |
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| Affiliation: | Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Amorphous/crystalline silicon heterojunctions(a-Si:H/c-Si SHJ) were prepared by plasma-enhanced chemical vapor deposition(PECVD).The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that: (1) The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of t... |
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| Keywords: | silicon heterojunction PECVD interface properties initial transient state of plasma hydrogen plasma pre-treatment |
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