| 采用SiO2/SixNy双材料微桥测试结构测量PECVD富硅氮化硅薄膜的导热系数 |
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| 引用本文： | 韩建强,李琰,李森林,李青.采用SiO2/SixNy双材料微桥测试结构测量PECVD富硅氮化硅薄膜的导热系数[J].半导体学报,2014,35(4):046002-4. |
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| 作者姓名： | 韩建强 李琰 李森林 李青 |
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| 基金项目： | 国家自然科学基金(61076110) ；浙江省‘仪器科学与技术’重中之重学科开放基金 |
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| 摘 要： | In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor deposition process. Accurately measuring the thermal conductivity of the film is highly desirable in order to design, simulate and optimize MEMS devices. In this paper, a Si02/SixNy bimaterial microbridge structure is presented to measure the thermal conductivity of the silicon-rich silicon nitride film by single steady-state measurement. The thermal conductivity is extracted as 3.25 W/（m-K）. Low thermal conductivity indicates that the silicon-rich silicon nitride film can still be utilized as thermally insulating material in thermal sensors although its thermal conductivity is slightly larger than the values reported in literature.
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| 关 键 词： | 氮化硅膜 微桥结构 热导率 双材料 PECVD 结构试验 MEMS结构 等离子体增强 |
| 收稿时间： | 9/4/2013 12:00:00 AM |
Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO2/SixNy bimaterial microbridge test structure |
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| Han Jianqiang,Li Yan,Li Senlin and Li Qing.Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO2/SixNy bimaterial microbridge test structure[J].Chinese Journal of Semiconductors,2014,35(4):046002-4. |
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| Authors: | Han Jianqiang Li Yan Li Senlin and Li Qing |
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| Affiliation: | College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China;College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China;College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China;College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China |
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| Abstract: | In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor deposition process. Accurately measuring the thermal conductivity of the film is highly desirable in order to design, simulate and optimize MEMS devices. In this paper, a SiO2/SixNy bimaterial microbridge structure is presented to measure the thermal conductivity of the silicon-rich silicon nitride film by single steady-state measurement. The thermal conductivity is extracted as 3.25 W/(m·K). Low thermal conductivity indicates that the silicon-rich silicon nitride film can still be utilized as thermally insulating material in thermal sensors although its thermal conductivity is slightly larger than the values reported in literature. |
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| Keywords: | MEMS silicon nitride film thermal conductivity bimaterial microbridge |
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