| 题目：电子泄露有关的氮化镓蓝光发射二极管低温发光效率行为 |
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| 引用本文： | 闫大为,李丽莎,任舰,王福学,杨国锋,肖少庆,顾晓峰.题目：电子泄露有关的氮化镓蓝光发射二极管低温发光效率行为[J].半导体学报,2014,35(4):044007-4. |
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| 作者姓名： | 闫大为 李丽莎 任舰 王福学 杨国锋 肖少庆 顾晓峰 |
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| 作者单位： | [1]Key Laboratory of Advanced Process Control for Light Industry （Ministry of Education）, Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China [2]Department of Science, Jiangnan University, Wuxi 214122, China |
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| 基金项目： | The National Natural Science Foundation of China under Grant 11074280; the Natural Science Foundation of Jiangsu Province, China under Grant BK2012110; the Fundamental Research Funds for the Central Universities of China under Grant Nos. JUSRP51323B and the State Key Laboratory of ASIC and System under Grant No.11KF003, PAPD of Jiangsu Higher Education Institutions and the Summit of the Six Top Talents Program of Jiangsu Province (DZXX-053). |
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| 摘 要： | The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.
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| 关 键 词： | 蓝色发光二极管 泄漏模型 发光效率 电子 行为 低温 GaN 温度范围 |
Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes |
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| Yan Dawei,Li Lish,Ren Jian,Wang Fuxue,Yang Guofeng,Xiao Shaoqing and Gu Xiaofeng.Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes[J].Chinese Journal of Semiconductors,2014,35(4):044007-4. |
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| Authors: | Yan Dawei Li Lish Ren Jian Wang Fuxue Yang Guofeng Xiao Shaoqing and Gu Xiaofeng |
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| Affiliation: | Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;Department of Science, Jiangnan University, Wuxi 214122, China;Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China |
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| Abstract: | The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well (MQW) blue light-emitting diodes (LEDs) grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior. |
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| Keywords: | gallium nitride light-emitting diode emission efficiency electron leakage |
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