Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD |
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Authors: | Zhang Biao Song Huaping Xu Xiaoqing Liu Jianming Wang Jun Liu Xianglin Yang Shaoyan Zhu Qinsheng Wang Zhanguo |
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Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. zhangbiao@semi.ac.cn |
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Abstract: | Well-aligned tilted Zn-doped InN nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. All of the nanorods are symmetrically tilted in two opposite directions. X-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane InN film. The nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. Zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the InN nanomaterials and their properties. |
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