| SiGe/Si HBT低频噪声特性研究 |
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| 引用本文： | 张万荣,高攀,金冬月,张静,张正元,刘道广,王健安,徐学良,陈光炳.SiGe/Si HBT低频噪声特性研究[J].微电子学,2006,36(1):23-26. |
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| 作者姓名： | 张万荣 高攀 金冬月 张静 张正元 刘道广 王健安 徐学良 陈光炳 |
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| 作者单位： | 1. 北京工业大学,电子信息与控制工程学院,北京,100022
2. 模拟集成电路国家重点实验室,重庆,400060 |
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| 基金项目： | 国家重点实验室基金;中国科学院资助项目;北京市优秀人才培养基金 |
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| 摘 要： | 对Si/Si1-xGexHBT的低频噪声进行了模拟。频率、基极电流、集电极电流、发射极几何尺寸(面积、条长)、Ge组份x、温度等诸多因素都对低频噪声有影响。模拟结果表明,Si/SiGeHBT具有优异的低频噪声特性。
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| 关 键 词： | SiGe/Si 异质结晶体管 低频噪声 |
| 文章编号： | 1004-3365（2006）01-0023-04 |
| 收稿时间： | 2005-04-26 |
| 修稿时间： | 2005-04-262005-06-30 |
Low-Frequency Noise Characteristics of Si/SiGe HBT's |
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| ZHANG Wan-rong,GAO Pan,JIN Dong-yue,ZHANG Jing,ZHANG Zheng-yuan,LIU Dao-guang,WANG Jian-an,XU Xue-liang,CHEN Guang-bing.Low-Frequency Noise Characteristics of Si/SiGe HBT''''s[J].Microelectronics,2006,36(1):23-26. |
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| Authors: | ZHANG Wan-rong GAO Pan JIN Dong-yue ZHANG Jing ZHANG Zheng-yuan LIU Dao-guang WANG Jian-an XU Xue-liang CHEN Guang-bing |
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| Affiliation: | 1. School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, P. R. China; 2. National Laboratory of Analog Integrated Circuits o Chongqing, 400060. P. R China |
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| Abstract: | Low-frequency noise characteristics of Si/Si_(1-x)Ge_x HBT's are simulated.Many factors,such as frequency,base current,collector current,geometry size(emitter area and length),Ge fraction and temperature,will have influence on low-frequency noise characteristics.Results from simulation show that Si/Si_(1-x)Ge_x HBT's have excellent low-frequency noise characteristics. |
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| Keywords: | Si/SiGe Heterojunction transistor Low frequency noise |
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