Monolithic PIN/preamplifier circuit integrated on a GaAs substrate |
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| Authors: | Wada O Hamaguchi H Miura S Makiuchi M Yamakoshi S Sakurai T Nakai K Iguchi K |
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| Affiliation: | Fujitsu Ltd., Atsugi, Japan; |
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| Abstract: | An AlGaAs/GaAs PIN photodiode and a GaAs transimpedance amplifier including six FETs have been monolithically integrated on a GaAs substrate. A photoreceiver operation exhibiting an excellent linearity has been demonstrated. The photodiode sensitivity of 0.44 A/W and the amplifier transimpedance of 1.0 × l04 V/A have been determined from the measurement. |
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