Electron emission from phosphorus- and boron-doped polycrystallinediamond films |
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| Authors: | Okano K Gleason KK |
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| Affiliation: | Dept. of Chem. Eng., MIT, Cambridge, MA; |
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| Abstract: | The electron emission from CVD-grown phosphorus (P-) and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films |
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