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Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Construction of a numerical process with a computational fluid dynamics code |
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| Authors: | Seung Taek Seo Yong Hee Lee Kwang Soon Lee Bum Kyoo Choi Dae Rook Yang |
| Affiliation: | (1) Department of Chemical and Biomolecular Eng., Sogang University, 1-Shinsoodong, Mapogu, 121-742 Seoul, Korea;(2) Department of Mechanical Eng., Sogang University, 1-Shinsoodong, Mapogu, 121-742 Seoul, Korea;(3) Department of Chemical and Biomolecular Eng., Korea University, 1-Anamdong, Seongbukgu, 136-701 Seoul, Korea;(4) Present address: LSI Division of Samsung Electronics Co., 446-711, Korea |
| Abstract: | A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design. |
| Keywords: | ICP Etcher C2F6 Plasmas SiO2 Etching Run-to-Run Control |
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