Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates |
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| Authors: | TE Sale JS Roberts ND Whitbread PN Robson |
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| Affiliation: | Dept. of Electron. & Electr. Eng., Sheffield Univ., UK; |
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| Abstract: | We report the operation of strained layer In/sub 0.20/Ga/sub 0.80/As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelectric field. Growth was by atmospheric pressure metal-organic vapor phase epitaxy (MOVPE). The threshold current density of a 1000 /spl mu/m/spl times/75 /spl mu/m device is 91 A/spl middot/cm/sup -2/ and waveguide transparency is estimated at 32 A/spl middot/cm/sup -2/ for a simple separate confinement heterostructure (SCH) emitting at 982 nm. |
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