| 高剂量辐照条件下的MOSFET总剂量辐照效应模型 |
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| 引用本文： | 万新恒,张兴,高文钰,黄如,王阳元.高剂量辐照条件下的MOSFET总剂量辐照效应模型[J].半导体学报,2001,22(10):1325-1328. |
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| 作者姓名： | 万新恒 张兴 高文钰 黄如 王阳元 |
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| 作者单位： | 北京大学微电子学研究所，北京100871 |
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| 基金项目： | 高等学校博士学科点专项科研项目;; |
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| 摘 要： | 报道了一种用于在高剂量辐照条件下 MOS器件抗辐照电路模拟的半经验模型 .利用该模型对 MOS器件实验结果进行了模拟 ,模型计算结果与实验吻合较好 .初步分析了高剂量条件下不同散射机制对模拟结果的影响 ,结果表明界面电荷的库仑散射是引起电子迁移率退化的主要机制
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| 关 键 词： | MOSFET 总剂量辐照效应 高剂量 模型 |
| 文章编号： | 0253-4177(2001)10-1325-04 |
| 修稿时间： | 2000年11月20日 |
A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose |
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| WAN Xin heng,ZHANG Xing,GAO Wen yu,HUANG Ru and WANG Yang yuan.A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose[J].Chinese Journal of Semiconductors,2001,22(10):1325-1328. |
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| Authors: | WAN Xin heng ZHANG Xing GAO Wen yu HUANG Ru and WANG Yang yuan |
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| Abstract: | A phenomenological model is proposed to discuss the total dose radiation effects on MOS devices at a high total dose.The model is verified by the comparison results of the simulated and measured post radiation device characteristics of MOSFETs.As a basic circuit simulation tool,it has proved useful to analyse the MOS transistors exposed to a nuclear environment with high radiations.In addition,the decrease in the electron mobility due to high dose irradiation is indicated to be caused mainly by the increase in Coulomb scattering of the interface charges with an increased density. |
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| Keywords: | MOSFET total dose radiation effects high total dose model |
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