| 横向场发射三极管 |
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| 引用本文： | 司马能. 横向场发射三极管[J]. 真空电子技术, 1995, 0(6): 52-54 |
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| 作者姓名： | 司马能 |
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| 作者单位： | 苏州电真空器件总厂 |
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| 摘 要： | 利用薄膜边缘场发射阴极设计的三极管、阴极、栅极和阳极是平面结构，因此极间电容小，适合应用于高速和高频电路。它在工艺上与半导体器件兼容，工艺比较简单，是真空微电子集成电路中的有源器件，它有着广泛的应用前景。
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| 关 键 词： | 横向场 场发射 三极管 真空微电子 |
Lateral Field-Emitter Triodes |
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| Si Maneng. Lateral Field-Emitter Triodes[J]. Vacuum Electronics, 1995, 0(6): 52-54 |
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| Authors: | Si Maneng |
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| Affiliation: | Suzhou Vacuum Electronic Device General Factory |
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| Abstract: | triode can be designed by film edge field emission cathode in which the cathode,gate and anode are all in a planar structure,so its interelectrode capacity is very low.It is suitable for the application of high speed and high frequency circuit.It manufacturing process is relatively simple and is compatible with that of semiconductor devices. In vacuum microelectronics intergrated eircuit,it is an active device and has wide-ranging application |
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| Keywords: | Lateral field Field emitter Triode Vacuum microelectronics |
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