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Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O |
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| Authors: | Kuo-Yi Yen Kuang-Pi Liu Jyh-Rong Gong Kuen-Yau Tsai Dong-Yuan Lyu Tai-Yuan Lin Guo-Yu Ni Far-Wen Jih |
| Affiliation: | 1. Department of Physics, National Chung Hsing University, Taichung, 402, Taiwan, ROC 2. Institute of Nanoscience, National Chung Hsing University, Taichung, 402, Taiwan, ROC 3. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, 202, Taiwan, ROC 4. Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan, 325, Taiwan, ROC |
| Abstract: | Zinc oxide (ZnO) films were grown on (11-20) sapphire substrates at 600 °C by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). A ZnO buffer layer was deposited at low temperature (LT) prior to the growth of a bulk ZnO film for a typical growth run. In some cases, buffer-layer annealing or post-annealing treatments were employed to optimize ZnO growth. Based on the experimental results of X-ray diffractometry (XRD) and transmission electron microscopy (TEM), all the as-grown ZnO films were found to show c-axis preferred orientation with co-existence of <1-100>ZnO∥<1-100>sapphire and <11-20>ZnO∥<1-100>sapphire relationships in the (0001)ZnO/(11-20)sapphire hetero-interface. Typical room temperature (RT) photoluminescence (PL) spectrum of the as-grown ZnO film shows only near band edge (NBE) emissions without defect luminescence. ZnO films with improved quality were achieved by post-annealing or buffer-layer annealing treatments. In particular, buffer-layer annealing was found to improve the crystalline and optical properties of a ZnO film substantially. |
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