| GaAIAs半导体功率放大激光器耦合效率的研究 |
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| 引用本文： | 杨晓妍 杨琏 刘丹 王征宇 李松柏 王安锋. GaAIAs半导体功率放大激光器耦合效率的研究[J]. 长春理工大学学报(自然科学版), 2006, 29(3): 12-13 |
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| 作者姓名： | 杨晓妍 杨琏 刘丹 王征宇 李松柏 王安锋 |
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| 作者单位： | 长春理工大学理学院,长春130022 |
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| 摘 要： | 通过对波长808nm的GaAIAs／GaAs半导体功率放大激光器端面镀ZrO2减反射膜工艺过程，从理论和实验上分析了涂层特性，透射率由无膜时的69％和32．6％提高到镀膜后的90％和80％以上，提高器件的耦合效率、输出光功率和工作寿命。
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| 关 键 词： | 半导体 功率放大 耦合 减反射膜 |
| 文章编号： | 1672-9870（2006）03-0012-02 |
| 收稿时间： | 2006-03-25 |
| 修稿时间： | 2006-03-25 |
Study on Coupling Efficiency of Laser with GaAIAs Semiconductor Power Amplification |
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| YANG Xiaoyan, YANG Lian, LIU Dan, WANG Zhengyu, LI Shongbai, WANG Anfeng. Study on Coupling Efficiency of Laser with GaAIAs Semiconductor Power Amplification[J]. Journal of Changchun University of Science and Technology, 2006, 29(3): 12-13 |
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| Authors: | YANG Xiaoyan YANG Lian LIU Dan WANG Zhengyu LI Shongbai WANG Anfeng |
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| Abstract: | The properties of coatings are analyzed theoretically and experimentally throughout the deposition process of ZrO2 antireflection films on facets of GaAIAs/GaAs laser with semiconductor power amplification for the wavelength of 808 nm . The transmissivities of cavity faces are increased from 69 % and 32. 6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device , output power of laser and operating lifetime are improved. |
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| Keywords: | semiconductor power amplification coupling antireilection films |
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