| 硅表面原子芯态能级的化学位移 |
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| 引用本文： | 邢益荣,钟学富. 硅表面原子芯态能级的化学位移[J]. 半导体学报, 1989, 10(1): 8-11 |
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| 作者姓名： | 邢益荣 钟学富 |
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| 作者单位： | 中国科学院半导体研究所 北京(邢益荣)，中国科学院半导体研究所 北京(钟学富) |
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| 摘 要： | 本文以共价晶体硅的(100)面为例,直接采用原子波函数,在键轨道模型近似下计算了清洁和存在氧吸附的表面Si原子的2p能级结合能的位移,得到了与实验数据相吻合的结果,从而证明了利用这种方法研究芯能级结合能的位移是行之有效的.
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| 关 键 词： | 硅 表面 芯能级 化学位移 |
Core Level Chemical Shift for Silicon Surface Atoms |
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| Xing Yirong/Institute of Semiconductors,Academia Sinica,BeijingZhong Xuefu/Institute of Semiconductors,Academia Sinica,Beijing. Core Level Chemical Shift for Silicon Surface Atoms[J]. Chinese Journal of Semiconductors, 1989, 10(1): 8-11 |
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| Authors: | Xing Yirong/Institute of Semiconductors Academia Sinica BeijingZhong Xuefu/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | A direct method based on Bond Obital Model from the true atomic wave functions issuggested for the calculation of core level shifts with both clean and adsorbel surfaces, takingthe Si(2p) electron on (100) surface as an example.The results are in agreement with theexperimental data.This demonstrates the application of the methed to the problem. |
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| Keywords: | Silicon Surface Core level Chemical shift |
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