Forming n-p junctions based on p-CdHgTe with low charge carrier density

The first results on the formation of n ⁺-p photodiodes with a long-wavelength boundary at λ_0.5 = 10.6 μm based on p-CdHgTe epilayers with a hole density of 3.3 × 10¹⁴ cm^?3 are presented. The CdHgTe layers were obtained by molecular beam epitaxy and exhibited p-type conduction in the as-grown state. The hole density and mobility were determined by means of the mobility spectrum technique. The photodiode structures were prepared by B⁺ ion implantation into as-grown p-CdHgTe epilayers without additional annealing. The R ₀ A product for the n ⁺-p photodiodes obtained is about 20 Θ cm² at 77 K.