Kollektorbeschichtungen für die EUV‐Lithografie

Collector Coatings for EUV Lithography Extreme ultraviolet lithography (EUVL) is the next generation lithogra phy method operating at the wavelength of 13.5 nm (14 times shorter than current lithography systems), enabling semiconductor scaling to resolutions of 22 nm and below 1]. This paper presents the successful coating of the world's largest ellipsoidal collector mirror for EUV radiation with a diameter of 660 mm ( Fig. 1 ). In order to achieve the required peak reflectivity of more than 65 %, the ellipsoidal collector was coated with a highly reflective, laterally graded multilayer using the dc magnetron sputtering system “NESSY”. A maximum reflectivity of the laterally graded multilayer of more than 65 % was achieved for radii smaller than 220 mm. For radii between 230 mm and 320 mm the reflectivity decreases to a minimum of 58 %. The targeted wavelength remains constant at (13.50 ± 0.05) nm over the entire collector surface which is well within the tight specifications for high volume manufacturing.