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Nitrogenation of boron doped diamond: Comparison of an electrochemical treatment in liquid ammonia and a NH3/N2 plasma
Authors:N Simon  C Decorse-Pascanut  AM Gonçalves  D Ballutaud  G Charrier  A Etcheberry
Affiliation:1. Institut Lavoisier de Versailles(ILV) UMR-CNRS 8180, Université de Versailles-St-Quentin en Yvelines-France;2. Groupe d''Etude de la Matière Condensée (GEMaC) UMR-CNRS 8635-France
Abstract:In the present work, two different nitrogenation of diamond surface were studied onto moderately doped BDD samples (1019 at cm? 3). The effects of an electrochemical treatment in liquid ammonia have been compared to those produced by NH3/N2 plasma. The evolution of surface terminations from “Csingle bondH” to “Csingle bondN” has been studied by XPS analyses for both nitrogenation methods. Angle contact measurements complete this work, estimating the effect of such treatments on BDD wettability properties. Finally, cyclic voltammetry in presence of redox systems have been carried out to evidence the impact of “Csingle bondN” bonds on BDD electrochemical behavior. In both cases the formation of “Csingle bondN” terminations was evidenced by XPS analyses. Physico-chemical properties of BDD electrodes, deduced from contact angle and electrochemical measurements, were strongly modified according the process. The galvanostatic treatment in liquid ammonia led to a more hydrophobic diamond surface and an improvement of the charge transfer with Ce4+/3+ redox couple, while a more hydrophilic surface and a notable decrease of the electrochemical response were generated by NH3/N2 plasma treatment.
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