n–p transformation in TlBi(1−x)SbxTe2 system |
| |
| Authors: | KM Paraskevopoulos E Hatzikraniotis ES Vinga M Ozer A Anagnostopoulos EK Polychroniadis |
| |
| Affiliation: | 1. Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR 54124 Thessaloniki, Greece;2. Department of Physics, Istanbul Kultur University, Turkey;1. Department of Materials Science, California Institute of Technology, 1200 E California Blvd., Pasadena, USA;2. Department of Chemistry, Koç University, Rumelifeneri Yolu, Sariyer, Istanbul, Turkey;3. Thermal Energy Conversion Technologies Group, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, USA;1. Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA;2. Department of Mechanical Engineering, Georgia Technical Institute, Atlanta, GA 30332, USA;3. Department of Mechanical Engineering, Rice University, Houston, TX 77005, USA;4. Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843, USA;1. Department of Physics, Faculty of Sciences and Letters, Çukurova University, 01330, Adana, Turkey;2. ICMA (CSIC-Universidad de Zaragoza), C/María de Luna 3, 50018, Zaragoza, Spain;3. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan;1. Department of Physics, Arab American University, Jenin, Palestine;2. Department of Telecommunication Engineering, Arab American University, Jenin, Palestine;3. Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;4. Metallurgical and Materials Engineering Dept., Marmara University, 34722 Istanbul, Turkey;1. Department of Physics, Necmettin Erbakan University, 42090 Konya, Turkey;2. ELI-ALPS, ELI-HU Nonprofit Ltd, H-6720 Szeged, Hungary;3. Department of Physics, Yildiz Technical University, 34210 ?stanbul, Turkey |
| |
| Abstract: | TlBi(1?x)SbxTe2 quaternary crystals that crystallize in a rhombohedral structure and according to their properties are classified between semimetals and narrow energy gap semiconductors, are studied. The study of their optical and electrical behavior reveal that they are quite sensitive to the Sb content x, and it is found that the substitution of Bi- with Sb-atoms in TlBiTe2 crystals leads initially to a decrease in the plasma frequency. However, for higher Sb contents, the plasma frequency increases. At room temperature, samples with x < 0.8 are n-type semiconductors, becoming p-type ones for x > 0.8.A model suggesting a suppression of the free electron concentration induced by the incorporation of Sb atoms into the crystal lattice of TlBiTe2 is used to explain this transition in the conductivity type. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
