Synthesis of methyl boron nitride film as low-k insulating film for LSI interconnection

Low dielectric constant (k) materials for the ULSI interconnect insulator are required to meet the fast development of high-speed devices. We have investigated low-k material of boron nitride containing methyl (methyl boron nitride) by using tris-di-methyl-amino-boron (TMAB) gas. The dielectric constant (k) of the film decreases with decreasing RF plasma power and the k value of the methyl BN film can be achieved as low as 1.8 at 10 W RF plasma power.Absorption band of the film was observed at 2960 cm^? 1 due to unsymmetrical stretching mode of C–H in CH₃. It is thought that increasing C–H bond with low polarizability and reducing CN bond with high polarizability can realize a lower k value. The film has also high resistivity of more than 1 × 10⁹ Ω cm and sufficient Young modulus of more than 26 GPa for the interlayer of LSI interconnection. There is a possibility that the dielectric constant can be decreased keeping the BN structure with high strength. The methyl BN film is an extremely attractive material as low-k material of next generation devices.