CVD growth of InGaN nanowires |
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| Authors: | XM Cai F Ye SY Jing DP Zhang P Fan EQ Xie |
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| Affiliation: | 1. Department of Applied Physics, Shenzhen University, Shenzhen 518060, China;2. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;3. The Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;1. Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK;2. Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK;3. Department of Physics, Arizona State University, Tempe, AZ, USA;1. Department of Materials Engineering, POSTECH, Pohang 790-784, Republic of Korea;2. National Center for Nanomaterials Technology, POSTECH, Pohang 790-784, Republic of Korea;1. Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany;2. Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, Campus Río San Pedro, 11510 Puerto Real, Spain;1. Department of Materials Science and Engineering Stanford University, Stanford, CA, 94305, United States;2. Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, United States;3. Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, United States;4. Stanford Nano Shared Facility, Stanford University, Stanford, CA, 94305, United States;5. Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, United States;6. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO, 80401, United States;7. European Synchrotron Radiation Facility, F 38043, Grenoble Cedex, France;8. Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397, Marseille, France |
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| Abstract: | In this paper, the chemical vapor deposition (CVD) growth of InGaN nanowires was systematically studied. The catalyst was Au and the starting materials were Ga, In and NH3. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron spectroscopy (TEM), and X-ray diffraction (XRD), etc. The influence of the growth temperatures, Au thicknesses, gas flowrates and Ga and In amount on the morphology and properties of InGaN nanowires was investigated. It is found that 600 °C is a suitable growth temperature. On the substrate with Au thickness of 150 Å, helical InGaN nanowires are obtained. The change of NH3 partial pressure and Au thickness will result in the morphology change of the samples. An increase of Ga results in shorter InGaN nanowires while an increase of In amount will lead to longer InGaN nanowires. The morphology will also change when both the amount of In and Ga were increased or reduced without changing the ratio of Ga to In. |
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