Effects of diamond-like carbon in TPD-Alq3 doped PVK organic light-emitting devices

Effects of an ultrathin (~ 1 nm) diamond-like carbon (DLC) layer in single-layer organic light-emitting devices (OLEDs) that consist of ITO/(TPD-Alq₃ doped PVK)/Al were investigated. DLC layers deposited by using Nd:YAG laser at laser wavelengths of 355 nm were high in sp³ content and resistivity (DLC_UV) while that of 1064 nm laser were lower in sp³ content and resistivity (DLC_IR), as characterized by Raman spectroscopy and resistivity measurements. Although emission were obtained for all the devices, only the device of ITO/DLC_UV/(TPD-Alq₃ doped PVK)/Al exhibited enhanced current density and brightness with lower turn-on voltage as compared to a standard device. Devices of ITO/DLC_IR/(TPD-Alq₃ doped PVK)/Al and ITO/(TPD-Alq₃ doped PVK)/DLC_UV/Al showed poor current and brightness characteristics but failed at higher applied voltage. The enhance performance of device with high resistivity/sp³ DLC film suggests the mechanisms of barrier reduction by sufficiently thin insulating layer which increase the probability of tunneling of carriers at ITO and PVK interface.