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在国产炉上研制区熔D101mm硅单晶
引用本文:魏斌.在国产炉上研制区熔D101mm硅单晶[J].四川有色金属,2003(1):39-41.
作者姓名:魏斌
作者单位:峨眉半导体材料研究所,四川,峨眉,614200
摘    要:高反压,大电流电力电子器件的发展要求FZ硅单晶直径进一步增大,大直径FZ硅单晶的拉制最大困难在于高频加热设备能力和成晶工艺条件。目前国内生产D101mmFZ硅单晶只有一个厂家能在进口设备上实现。我们通过设备技术改造和工艺条件摸索。成功实现了在国产设备上拉制D101mmFZ硅单晶。填补了空白。节约了外汇。为国内硅材料生产厂家和国产设备制造厂树立了信心。

关 键 词:国产炉  FZ-Si  研制  硅单晶
修稿时间:2003年1月17日

Developing Fz-Si Single Crystal of 101mm Diameter with the Grower Made in China
Wei Bin.Developing Fz-Si Single Crystal of 101mm Diameter with the Grower Made in China[J].Sichuan Nonferrous Metals,2003(1):39-41.
Authors:Wei Bin
Affiliation:EMEI semiconductor material research institute 614200
Abstract:With the development of high reverse,high current electric & electronic device,the diameter of FZ-Si single crystal is getting larger.The most difficulty in growing FZ-Si crystal lies on the capacity of high frequency generator and technological conditions in growing crystal.At present,only one manufacturers in China can produce FZ-Si single crystal of 100mm in diameter with the imported grower.We heve successfully produced the kind of FZ-Si single crystal with Chinese grower through the modernization of grower and the development of technological condition,which fills in the blank at home,save foreign exchange,and set up confidence for grower nanufacturer and silicon material prodncers.
Keywords:Grower Made in China  FZ-Si
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