Tunnel barrier properties of stressed ferromagnetic tunneljunctions |
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| Authors: | Das J Degraeve R Boeve H Lagae L Groeseneken G Borghs G de Broek J |
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| Affiliation: | Dept. of Electr. Eng., Seoul Nat. Univ.; |
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| Abstract: | The oxide breakdown properties of ultra-thin (-1 nm) naturally oxidised Al2O3 tunnel barriers in magnetic tunnel junctions were studied using ramped and constant stress experiments. During stress measurements at 1.35 V, a fast breakdown of the junction was observed. The time-to-breakdown is evaluated using Weibull statistics, as commonly utilised in SiO2 reliability studies |
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