Photoelectric properties of In/In2Se3 structures |
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| Authors: | G. A. Il’chuk V. V. Kus’nézh R. Yu. Petrus’ V. Yu. Rud’ Yu. V. Rud’ V. O. Ukrainets |
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| Affiliation: | (1) National University Lvivska Politekhnika, Lviv, 79013, Ukraine;(2) St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia;(3) Ioffe Physicotechnucal Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | The hexagonal modification of In2Se3 single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In2Se3, which are photosensitive in a wide incident-photon energy range of 1–3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters. |
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