Temperature dependence of common-emitter I-V andcollector breakdown voltage characteristics in AlGaAs/GaAs andAlInAs/GaInAs HBT's grown by MBE |
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Authors: | Malik R.J. Chand N. Nagle J. Ryan R.W. Alavi K. Cho A.Y. |
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Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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Abstract: | Temperature-dependent measurements from 25 to 125°C have been made of the DC I-V characteristics of HBTs with GaAs and In0.53Ga0.47As collector regions. It was found that the GaAs HBTs have very low output conductance and high collector breakdown voltage BVCEO>10 V at 25°C, which increases with temperature. In striking contrast, the In0.53Ga0.47As HBTs have very high output conductance and low BVCEO~2.5 V at 25°C, which actually decreases with temperature. This different behavior is explained by the >104 higher collector leakage current, ICO, in In0.53Ga0.47As compared to GaAs due to bandgap differences. It is also shown that device self-heating plays a role in the I-V characteristics |
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