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射频溅射功率对非晶Zn-Sn-O薄膜性能的影响
引用本文:岳兰.射频溅射功率对非晶Zn-Sn-O薄膜性能的影响[J].半导体光电,2019,40(5):661-664, 670.
作者姓名:岳兰
作者单位:贵州民族大学材料科学与工程学院贵州省普通高等学校光电信息分析与处理特色重点实验室,贵阳,550025
基金项目:国家自然科学基金项目(61504031);贵州省普通高等学校光电信息分析与处理特色重点实验室项目(KY[2016]003);贵州省科学技术基金项目(黔科合LH字[2014]7388,黔科合LH字[2014]7389);贵州省教育厅青年成长人才项目(黔教合字[2016]155);贵州民族大学科研基金项目(15XRY009).
摘    要:使用射频磁控溅射法,基于不同溅射功率(58、79、116、148和171W)条件在玻璃基底上室温制备了Zn-Sn-O(ZTO)薄膜,并探讨了溅射功率对薄膜的结构、电学性能和光学性能的影响。结果表明,提高溅射功率有助于提升薄膜的沉积速率;XRD分析表明不同溅射功率条件下制备的ZTO薄膜均具备稳定的非晶结构;随着溅射功率的增加,薄膜的电阻率下降,光学吸收边“红移”(光学禁带宽度从3.77eV减小到3.62eV);整体来看,在58~148W溅射功率范围内制备的ZTO薄膜具备较好的可见光透明性,其在380~780nm可见光范围内的平均透过率均超过85%。

关 键 词:ZTO薄膜  射频磁控溅射  溅射功率  电学性能  光学性能
收稿时间:2019/5/13 0:00:00

Effect of Radio Frequency Sputtering Power on Properties of Zinc-Tin-Oxide Thin Films
YUE Lan.Effect of Radio Frequency Sputtering Power on Properties of Zinc-Tin-Oxide Thin Films[J].Semiconductor Optoelectronics,2019,40(5):661-664, 670.
Authors:YUE Lan
Affiliation:Special and Key Lab. of Guizhou Provincial Higher Education for Photoelectric Information Analysis and Processing, School of Materials Science and Engin., Guizhou Minzu University, Guiyang 550025, CHN
Abstract:Zinc tin oxide (ZTO) thin films were deposited on glass substrates by radio frequency (RF) sputtering with various sputtering power (58,9,116,8 and 171W) at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. It is indicated that with increasing sputtering power, the deposition rate improves significantly. X-ray diffraction (XRD) analysis reveals that all the films are amorphous structure. The resistivity decreases with the increase of the sputtering power, and the optical band gap red shifts from 3.77 to 3.62eV with increasing sputtering power. The ZTO films within the sputtering power range of 58~148W exhibit high transparency of over 85% in the visible range (380~780nm).
Keywords:zinc-tin-oxide thin films  radio frequency magnetron sputtering  sputtering power  electrical properties  optical properties
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