SOI铁电负电容晶体管亚阈值特性研究

随着微电子技术进入纳米领域,功耗成为制约技术发展的主要因素,因此,低功耗器件成为半导体器件领域的研究热点。负电容场效应晶体管基于铁电材料的负电容效应可有效地降低器件的亚阈值摆幅,从而降低器件的功耗。该文设计了一种基于绝缘体上硅(SOI)结构的铁电负电容场效应晶体管,利用TCAD Sentaurus仿真工具对负电容晶体管进行仿真研究,得到了亚阈值摆幅为30.931 mV/dec的负电容场效应晶体管的器件结构和参数。最后仿真研究了铁电层厚度、等效栅氧化层厚度对负电容场效应晶体管亚阈值特性的影响。

Research on Sub threshold Characteristics of SOI Ferroelectric Negative Capacitor Transistor

With the development of microelectronics technology into nano scale, power consumption has become the major factor restricting the technology development, so the low power consumption devices have become a research hotspot in the field of semiconductor devices. The negative capacitance field effect transistor (NCFET) based on the negative capacitance effect of ferroelectric materials can effectively reduce the sub threshold swing of the device, thereby reducing the power consumption of the device. In this paper, a ferroelectric negative capacitance field effect transistor based on silicon on insulator(SOI) structure is designed. The negative capacitance transistor is simulated by using the TCAD Sentaurus simulation tool and the device structure and parameters of the negative capacitance field effect transistor with a sub threshold swing of 30.931 mV/dec are obtained. Finally, the effects of ferroelectric layer thickness and equivalent gate oxide thickness on the sub threshold characteristics of ferroelectric negative capacitor field effect transistors are simulated and studied.