| InAs/GaAsSb带间级联中波红外焦平面研究 |
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| 引用本文： | 周易,柴旭良,田源,徐志成,黄敏,许佳佳,黄爱波,白治中,陈红雷,丁瑞军,陈建新,何力. InAs/GaAsSb带间级联中波红外焦平面研究[J]. 红外与毫米波学报, 2019, 38(6): 745-750 |
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| 作者姓名： | 周易 柴旭良 田源 徐志成 黄敏 许佳佳 黄爱波 白治中 陈红雷 丁瑞军 陈建新 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海,200083;中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海 200083;中国科学院大学,北京 100049 |
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| 基金项目： | 国家重点研发计划 2016YFB0402403;国家自然科学基金 61974152 61904183 61534006 61505237 61505235;中国科学院青年创新促进会会员资助 2016219国家重点研发计划（2016YFB0402403），国家自然科学基金（61974152, 61904183, 61534006， 61505237, 61505235），中国科学院青年创新促进会会员资助（2016219） |
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| 摘 要： | 针对高工作温度红外探测器的迫切需求,设计并利用分子束外延技术制备了高晶格质量的2级带间级联中波红外探测材料,带间级联单元器件在最高323 K下可以测试到清晰的响应光谱,140 K下暗电流密度达到4×10~(-5)A/cm~(-2).并在此基础上利用干法刻蚀技术实现了320×256规模的台面型带间级联红外焦平面原型器件.焦平面测试结果表明其在80-120K范围内量子效率达到30%,127 K下噪声等效温差为55.1 mK,盲元率为2.3%.采用该焦平面器件在127 K下获得了较为清晰的演示性室温目标红外热成像.
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| 关 键 词： | 光电探测器 红外焦平面 带间级联结构 高工作温度 |
| 收稿时间： | 2019-04-15 |
| 修稿时间： | 2019-11-19 |
Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays |
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| ZHOU Yi,CHAI Xu-Liang,TIAN Yuan,XU Zhi-Cheng,HUANG Min,XU Jia-Ji,HUANG Ai-Bo,BAI Zhi-Zhong,CHEN Hong-Lei,DING Rui-Jun,CHEN Jian-Xin and HE Li. Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2019, 38(6): 745-750 |
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| Authors: | ZHOU Yi CHAI Xu-Liang TIAN Yuan XU Zhi-Cheng HUANG Min XU Jia-Ji HUANG Ai-Bo BAI Zhi-Zhong CHEN Hong-Lei DING Rui-Jun CHEN Jian-Xin HE Li |
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| Affiliation: | Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;University of Chinese Academy of Science, Beijing 100049, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | |
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| Keywords: | photoelectric detector infrared focal plane arrays interband cascade structure high operation temperature |
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